• DocumentCode
    3629167
  • Title

    A 65-W high-efficiency UHF GaN power amplifier

  • Author

    Nestor D. Lopez;John Hoversten;Matthew Poulton;Zoya Popovic

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Colorado, Boulder, 80309, USA
  • fYear
    2008
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V and 28 V, respectively. Load pull techniques under Class-E conditions are used for device characterization and matching network design. The PA is implemented in a hybrid circuit with mixed lumped-element and transmission-line matching networks. A weighted Euclidean distance is defined to enable tradeoff studies between output power (POUT) and efficiency, in order to find the final optimal amplifier design.
  • Keywords
    "Power amplifiers","Power generation","Transistors","Gallium nitride","Impedance","HEMTs","Microwave amplifiers"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4633104
  • Filename
    4633104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3629167