Title :
Highly unidirectional Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers
Author :
Omar K. Qassim; Chia-Yeh Li;Nathan J. Withers;Gennady A. Smolyakov;Marek Osinski
Author_Institution :
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, 87106-4343, USA
Abstract :
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices.
Keywords :
"Ring lasers","Semiconductor lasers","Quantum dot lasers","Threshold current","Laser modes","Waveguide lasers","Quantum dots"
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
1947-6981
DOI :
10.1109/ISLC.2008.4636041
