Title :
Origin of the low frequency type curve in Silicon-on-Sapphire MOS capacitors
Author :
Hiroshi Domyo;Karl Bertling;Tran Ho;Neal Kistler;George Imthurn;Michael Stuber;Aleksandar D. Rakic; Yew-Tong Yeow
Author_Institution :
School of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, QLD 4072, Brisbane, Australia
Abstract :
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs surface silicon-sapphire interface quality.
Keywords :
"Frequency","MOS capacitors","Silicon","Testing","Semiconductor films","Capacitance-voltage characteristics","CMOS technology","Australia","Electric variables measurement","Measurement standards"
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
2377-5505
DOI :
10.1109/COMMAD.2008.4802108
