Interference Signal Effects on a High-Frequency Monolithic Voltage-Controlled Oscillator: Experiments and Simulations

Author

Raoult, Jeremy ; Blain, A. ; Doridant, A. ; Jarrix, Sylvie

Author_Institution

Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France

Volume

56

Issue

1

fYear

2014

fDate

Feb. 2014

Firstpage

51

Lastpage

59

Abstract

This paper reflects a part of electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on a 5 GHz monolithic voltage-controlled oscillator (VCO). This circuit is implemented on a 0.35 μm BiCMOS SiGe process. Injection locking and pulling are put in evidence when the circuit is subject to a high frequency interference with possible frequency band widened with respect to the oscillation frequency band of the VCO. A simulation process based on envelope-transient method is presented. Its main goal is to predict the behavior of the VCO under injection with interference signal power ranging from low to high level.

Keywords

BiCMOS integrated circuits; active networks; electromagnetic interference; injection locked oscillators; voltage-controlled oscillators; 0.35 μm BiCMOS SiGe process; VCO; active circuits; electromagnetic interference; electromagnetic susceptibility studies; frequency 5 GHz; high-frequency monolithic voltage-controlled oscillator; injection locking; injection pulling; interference signal effects; oscillation frequency band; Frequency modulation; Injection-locked oscillators; Interference; Q-factor; Voltage control; Voltage-controlled oscillators; Electromagnetic susceptibility; envelope-transient technique; injection pulling; injection-locking; simulation process; voltage-controlled oscillator;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2013.2271792

Filename

6558760