Low-frequency noise diagnostic of microelectronic devices

Excess electrical noise has a large intensity at low frequencies. It is caused by imperfections in the electron devices. That is why the noise measurements are very suitable for analysis of the defects in microelectronic device. The generation-recombination (g-r) noise, RTS and 1/f noise can be used for diagnosis of the defects. In the paper the diagnostic procedures based on these types of the noise are presented and discussed. The possibility of the noise diagnostic of defects in the space charge region of p-n junction and the oxide close to interface oxide/semiconductor is discussed.