Title :
Screening the reliable chips by laser acceleration of deep levels recombination
Author :
L. Galateanu;F. Baicu
Author_Institution :
Res. Inst. for Electron. Components, Bucharest, Romania
Abstract :
The irradiation by a He-Ne laser (/spl lambda/=0,6328 /spl mu/m, P=10 mW) of the space charge region of a reverse biased p-n junction is used for the acceleration of "the hot spots" formation at deep levels centers. A reliability screening test, performed at the semiconductor chips level and having durations in the range of a minute, was obtained. Important savings result.
Keywords :
"Acceleration","Radiative recombination","Life estimation","Laser transitions","Semiconductor lasers","Accelerated aging","Spontaneous emission","Semiconductor device reliability","Semiconductor device testing","Performance evaluation"
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503547
