DocumentCode :
3631954
Title :
A low-power dual-band oscillator based on band-limited negative resistance
Author :
Burak Catli;Mona M. Hella
Author_Institution :
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
fYear :
2009
Firstpage :
251
Lastpage :
254
Abstract :
This paper presents a 2.1/3.9 GHz oscillator based on switching the negative resistance bandwidth of a capacitively degenerated common collector stage, while using a high order resonance tank. Multi-band oscillators have traditionally been implemented by reconfiguring the oscillator tank. In this paper, we employ a fixed high order resonator, and move the bandswitching mechanism from the tank to the loss compensation network (i.e. negative resistance network), thus maintaining the high quality factor of the tank at multiple oscillation frequencies. The proposed oscillator is implemented in a 30GHz fT GaAs process with VBE=1.3V. The measured phase noise for both bands is −136dBc/Hz at 1MHz with a power consumption of 5.1mW, and a FOM of −195.39dBc/Hz and −200.72dBc/Hz for 2.1 and 3.9GHz respectively.
Keywords :
"Dual band","Oscillators","Bandwidth","Resonance","Q factor","Frequency","Gallium arsenide","Electrical resistance measurement","Power measurement","Noise measurement"
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
2375-0995
Type :
conf
DOI :
10.1109/RFIC.2009.5135533
Filename :
5135533
Link To Document :
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