Title :
Electrical and optical characterisation of (λ∼9.4µm) GaAs-based quantum cascade lasers
Author :
Anna Szerling;Piotr Karbownik;Emilia Pruszy?ska-Karbownik;Kamil Kosiel;Maciej Bugajski;Shubhada Adhi;Tomasz Ochalski;Guillaume Huyet
Author_Institution :
Institute of Electron Technology, Al.Lotnik?w 32/46, 02-668 Warszawa, Poland
Abstract :
The basic device characterization of (λ-9.4 μm) GaAs-based quantum cascade lasers (QCLs) operating up to 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE, with Riber Compact 21T reactor. The influence of injector doping on electrical and optical properties of the lasers has been clarified.
Keywords :
"Quantum cascade lasers","Doping","Gallium arsenide","Land surface temperature","Electrons","Gold","Quantum well lasers","Current-voltage characteristics","Testing","Surface emitting lasers"
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Print_ISBN :
978-1-4244-3848-8
DOI :
10.1109/TERAMIR.2009.5379622
