DocumentCode
3634859
Title
Behavior of Bipolar and MOSFET transistors used in power stages of a controlled current amplifier
Author
Radu Arsinte;Dorin Petreuş
Author_Institution
Technical University of Cluj-Napoca /Communication Department, Str. Gh. Baritiu 26-28, 400027, Romania
fYear
2009
Firstpage
245
Lastpage
249
Abstract
The paper presents a comparative analysis of power efficiency and speed for different solutions of driving inductive loads. The main application is a power stages in special CRT display systems, requiring high efficiency, low rise and fall times for the current (less than 1 ?s for full scale current variation - 2 App). The paper analyzes a controlled (hybrid) main bridge topology, implemented both in Bipolar and MOS technologies for the final stages. The results for simulation of the theoretical and optimized circuits are presented.
Keywords
"MOSFET circuits","Power MOSFET","Power amplifiers","Cathode ray tubes","Bridge circuits","Pulse amplifiers","Signal design","Coils","Pulse circuits","Electronics packaging"
Publisher
ieee
Conference_Titel
Design and Technology of Electronics Packages, (SIITME) 2009 15th International Symposium for
Print_ISBN
978-1-4244-5132-6
Type
conf
DOI
10.1109/SIITME.2009.5407366
Filename
5407366
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