• DocumentCode
    3636058
  • Title

    Effects of constant voltage stress in Hf-doped Ta2O5 stacks

  • Author

    I. Manić;E. Atanassova;N. Stojadinović;D. Spassov

  • Author_Institution
    Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis, Serbia
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    483
  • Lastpage
    486
  • Abstract
    Conduction mechanisms in Hf-doped Ta2O5 stacks (7; 10 nm) under the constant voltage stress (CVS) are probed by the SILC analysis. The low field conduction is ascribed to trap-assisted tunneling, and the Poole-Frenkel effect dominates at medium and high fields. Stress affects the pre-existing traps and their energy levels, but does not create additional traps. The thinner layers exhibit better temperature and electrical stability after CVS.
  • Keywords
    "Voltage","Stress","Leakage current","High K dielectric materials","Hafnium","High-K gate dielectrics","Dielectric constant","Optical films","Performance evaluation","Doping"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490437
  • Filename
    5490437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3636058