• DocumentCode
    3637360
  • Title

    Nonlinear compact thermal model of SiC power semiconductor devices

  • Author

    Krzysztof Górecki;Janusz Zarębski;Damian Bisewski;Jacek Dąbrowski

  • Author_Institution
    Department of Marine Electronics, Gdynia Maritime University, Poland
  • fYear
    2010
  • Firstpage
    365
  • Lastpage
    370
  • Abstract
    The paper deals with the nonlinear compact thermal model of SiC power semiconductor devices based on the Cauer network. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the Schottky diode and MESFET transistor at their various cooling conditions.
  • Keywords
    "Integrated circuit modeling","Transistors","Temperature measurement","Thermal resistance","Transient analysis","Power measurement"
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
  • Print_ISBN
    978-1-4244-7011-2
  • Type

    conf

  • Filename
    5551330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3637360