• DocumentCode
    3637541
  • Title

    Dynamic SRAM stability characterization in 45nm CMOS

  • Author

    Seng Oon Toh;Zheng Guo;Borivoje Nikolić

  • Author_Institution
    Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 94720, USA
  • fYear
    2010
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    A method for characterizing dynamic SRAM stability using pulsed wordlines, is demonstrated in 45nm CMOS. Static read margins were observed to overestimate failures by up to 1000x while static write margins failed to predict outliers in dynamic write stability. Dynamic write stability was demonstrated to exhibit an enhanced sensitivity to process variations, and negative bias temperature instability (NBTI), compared to static write margins.
  • Keywords
    "Circuit stability","Stability analysis","Random access memory","Calibration","Thermal stability","Pulse generation","Correlation"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2010 IEEE Symposium on
  • Print_ISBN
    978-1-4244-5454-9
  • Type

    conf

  • DOI
    10.1109/VLSIC.2010.5560259
  • Filename
    5560259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3637541