DocumentCode
3638489
Title
Analysis and demonstration of MEM-relay power gating
Author
Hossein Fariborzi;Matthew Spencer;Vaibhav Karkare;Jaeseok Jeon;Rhesa Nathanael; Chengcheng Wang;Fred Chen;Hei Kam;Vincent Pott;Tsu-Jae King Liu;Elad Alon;Vladimir Stojanović;Dejan Marković
Author_Institution
MIT, Cambridge, MA
fYear
2010
Firstpage
1
Lastpage
4
Abstract
This paper shows that due to their negligibly low leakage, in certain applications, chips utilizing power gates built even with today´s relatively large, high-voltage micro-electro-mechanical (MEM) relays can achieve lower total energy than those built with CMOS transistors. A simple analysis provides design guidelines for off-time and savings estimates as a function of technology parameters, and quantifies the further benefits of scaled relay designs. Finally, we demonstrate a relay chip successfully power-gating a CMOS chip, and show a relay-based timer suitable for self-timed operation.
Keywords
"Relays","Logic gates","CMOS integrated circuits","Power MOSFET","Capacitance","CMOS technology"
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2010 IEEE
ISSN
0886-5930
Print_ISBN
978-1-4244-5758-8
Electronic_ISBN
2152-3630
Type
conf
DOI
10.1109/CICC.2010.5617380
Filename
5617380
Link To Document