DocumentCode :
3638918
Title :
Response time distribution. A way to describe the photocurrent transient
Author :
P. Popovic;S. Grebner;E. Bassanese;F. Smole;J. Furlan;R. Schwarz
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
fYear :
1996
Firstpage :
1145
Lastpage :
1148
Abstract :
The authors studied the secondary photocurrent decay in thin layers of intrinsic amorphous silicon solar cells. The decay of the secondary photocurrent in the coplanar arrangement was measured and simulated in the temperature range from 140 K to room temperature. Data were analysed to obtain response times using different definitions. Instead of observing the measured and modelled transients in the time domain, they introduce an additional processing of the data leading to response time distributions. Different types of response time spectra are compared and the physical origin for the distribution of response times is discussed for Si solar cells.
Keywords :
"Delay","Photoconductivity","Amorphous silicon","Temperature distribution","Time measurement","Computational modeling","Nonlinear equations","Lighting","Data analysis","Steady-state"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564334
Filename :
564334
Link To Document :
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