DocumentCode :
3641017
Title :
AC analysis of defect cross sections using non-radiative MPA quantum model
Author :
Davide Garetto;Yoann Mamy Randriamihaja;Alban Zaka;Denis Rideau;Alexandre Schmid;Hervé Jaouem;Yusuf Leblebici
Author_Institution :
IBM Systems and Technology Group - 850, rue Jean Monnet, Crolles, France
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.
Keywords :
"Silicon","Charge carrier processes","Capacitance","Reservoirs","Logic gates","Biological system modeling","Frequency measurement"
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Print_ISBN :
978-1-4577-0090-3
Type :
conf
DOI :
10.1109/ULIS.2011.5757973
Filename :
5757973
Link To Document :
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