Title :
AC analysis of defect cross sections using non-radiative MPA quantum model
Author :
Davide Garetto;Yoann Mamy Randriamihaja;Alban Zaka;Denis Rideau;Alexandre Schmid;Hervé Jaouem;Yusuf Leblebici
Author_Institution :
IBM Systems and Technology Group - 850, rue Jean Monnet, Crolles, France
fDate :
3/1/2011 12:00:00 AM
Abstract :
A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.
Keywords :
"Silicon","Charge carrier processes","Capacitance","Reservoirs","Logic gates","Biological system modeling","Frequency measurement"
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Print_ISBN :
978-1-4577-0090-3
DOI :
10.1109/ULIS.2011.5757973