DocumentCode :
3641380
Title :
Thermawave/sup TM/ and substrate considerations for low dose implants
Author :
R.M. Lee;M.D.S. Castle;N.L.H. Clarke;G. De Cock;T. Romig
Author_Institution :
Appl. Materials, Austin, TX, USA
fYear :
1996
Firstpage :
498
Lastpage :
500
Abstract :
The condition of the silicon substrate prior to implant can have a significant effect on the Thermawave/sup TM/ (TW) readings for a low dose implant. This study looks at the repeatability and uniformity of a series of cumulative implants run on a PI9500/spl times/R implanter and the influence of the silicon substrate on the TW results. The affect on manufacturing trend data is also discussed.
Keywords :
"Implants","Silicon","Boron","Substrates","Testing","Rapid thermal annealing","Semiconductor materials","Metrology","Manufacturing industries","Rapid thermal processing"
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586410
Filename :
586410
Link To Document :
بازگشت