Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Author

Agah, A. ; Jayamon, Jefy Alex ; Asbeck, P.M. ; Larson, Lawrence E. ; Buckwalter, James F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA

Volume

49

Issue

5

fYear

2014

fDate

May-14

Firstpage

1148

Lastpage

1157

Abstract

Gate resistance significantly limits the output power and power-added efficiency of stacked-FET power amplifiers in 45 nm SOI CMOS above 60 GHz. A multi-drive stacked-FET approach is proposed to improve the output power and efficiency. An analysis of conventional and multi-drive stacked-FET PAs demonstrates the performance improvement. A multi-drive three-stack PA is implemented in 45 nm SOI CMOS for 90 GHz operation occupying 0.23 mm 2 . This PA achieves more than 19 dBm output power with peak PAE of 14% and 12 dB gain at 90 GHz using a 3.4 V power supply.

Keywords

CMOS integrated circuits; field effect MIMIC; power amplifiers; silicon-on-insulator; SOI CMOS integrated circuit; frequency 90 GHz; gain 12 dB; gate resistance; multidrive stacked FET; power amplifier; size 45 nm; voltage 3.4 V; CMOS integrated circuits; Educational institutions; Field effect transistors; Logic gates; Power amplifiers; Power generation; Reliability; CMOS SOI; W-band; millimeter wave; multi-drive; power added efficiency; power amplifier; stacked-FET PA;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2014.2308292

Filename

6767139