Characterization of HPGe- and Si(Li)-detectors with a 1D-fine pitch strip structure

Results of the first measurements on HPGe- and Si(Li)-detectors with an one dimensional fine pitch strip structure are presented. The position-sensitive structures were fabricated on implanted boron contacts by means of photolithography with a subsequent plasma etching. A group of 5 neighbouring strips of both detector types was examinated concerning the reverse current, resistance between a position-element and the neighbourhood and the response to the photons up to 60 keV.