DocumentCode :
3647245
Title :
Planar fully depleted SOI technology: The convergence of high performance and low power towards multimedia mobile applications
Author :
Bertrand Pelloux-Prayer;Milovan Blagojević;Olivier Thomas;Amara Amara;Andrei Vladimirescu;Borivoje Nikolić;Giorgio Cesana;Philippe Flatresse
Author_Institution :
STMicroelectronics Crolles
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
Planar fully-depleted SOI technology is becoming mainstream within STMicroelectronics, targeting modern mobile and consumer multimedia markets. This technology combines high performance and low power consumption, complemented by an excellent responsiveness to power management design techniques. The fabrication process is comparatively simple and is a low-risk evolutionary step from conventional planar bulk CMOS. At 28nm, we find that planar FD more than matches the peak performance of “G”-type bulk technology, at the cost and complexity of a low-power type technology, with better power efficiency across use cases than any of the conventional bulk CMOS flavors. FD implementation of a representative design offers 1.6×-7× speedup compared to bulk across a range of supply voltages.
Keywords :
"CMOS integrated circuits","Transistors","Logic gates","CMOS technology","Switches","Electrostatics","Silicon"
Publisher :
ieee
Conference_Titel :
Faible Tension Faible Consommation (FTFC), 2012 IEEE
Print_ISBN :
978-1-4673-0822-9
Type :
conf
DOI :
10.1109/FTFC.2012.6231742
Filename :
6231742
Link To Document :
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