Title :
Deep-UV Lithographic Approaches For 1 Gb DRAM
Author :
Wong; Farrell; Ferguson; Lut; Mansfield; Molless; Neisser; Nunes; Samuels; Thomas
Author_Institution :
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
fDate :
6/19/1905 12:00:00 AM
Keywords :
"Lighting","Resists","Standards","Random access memory","Lithography","Optimization","Arrays"
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623731
