Title :
Polysilicon temperature sensor
Author :
Z. Bendekovic;P. Biljanovic;D. Grgec
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
Abstract :
Temperature dependence of polysilicon electrical resistance is investigated using existing polysilicon electrical conduction models. Conducted simulations showed the possibility of producing polysilicon resistors having a stable resistance on temperature dependence. A new polysilicon temperature sensor structure is proposed and processed according to optimal specifications. Measurements conducted on the processed samples showed that they have an almost linear resistance vs. temperature characteristic in a wide temperature range from 200 to 800 K.
Keywords :
"Temperature sensors","Electric resistance","Semiconductor process modeling","Grain size","Temperature dependence","Electrical resistance measurement","Temperature distribution","Microelectronics","Conductive films","Predictive models"
Conference_Titel :
Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
Print_ISBN :
0-7803-3879-0
DOI :
10.1109/MELCON.1998.692428
