Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silicon and the bipolar base oxide facilitate the recombination process primarily above the sensitive emitter-base junction. This leads to an increase in surface recombination current in the SCR, which is a non-ideal component of the BJT´s base current characteristic under active bias conditions. In this paper, we derive a precise analytical model for surface recombination current that captures bias dependencies typically omitted from traditional models. This improved model is validated by comparisons to these traditional approaches.