• DocumentCode
    3659192
  • Title

    Variation of Coulomb diamonds and excited states caused by electric field in Si single-electron transistor

  • Author

    Hikaru Satoh;Takafumi Uchida;Atsushi Tsurumaki-Fukuchi;Masashi Arita;Akira Fujiwara;Yasuo Takahashi

  • Author_Institution
    Graduate school of Information Science and Technology, Hokkaido University, Sapporo, 060-0814, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Small Si single-electron transistors (SETs) show interesting nature due to their complicated energy-level structure. We evaluate Coulomb diamonds and excited states of dual-gate SETs by changing an electric field in the SET island. Even though the number of electron in the SET island is constant, the electric field applied by the dual gates remarkably changes the electron addition energies. In addition, interesting variation of excited states due to the electric field are also observed.
  • Keywords
    "Silicon","Diamonds","Electric fields","Logic gates","Wave functions","Single electron transistors","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659192