Behavioral model for simplified identification of memristor parameters

The paper deals with a simplified model of the HP TiO2 memristor, which can be used for identifying the parameters of built-in memristors, i.e. in cases where there is only a limited set of measurements possible. The memristor is excited by a rectangular voltage waveform and the built-in measuring device can measure the times when the memristor current crosses several thresholds. The proposed approach is based on deriving a behavioral model being able to reproduce nonlinear dynamics of memristor. The identified parameters may serve to assess process variations and detecting non-catastrophic failures.