Title :
1GHz wireless power delivery using 0.2×0.2mm2 on-chip inductor for 3-D stacked chips
Author :
Liusheng Sun;Junwei Xu;Weijun Mao;Shuai Zou;Peijin Lv;Xiaolei Zhu
Author_Institution :
Institute of VLSI Design, Zhejiang University, Hangzhou, 310027, China
fDate :
6/1/2015 12:00:00 AM
Abstract :
A high frequency, high power density wireless interchip power delivery for 3-D Stacked chips applications is proposed and implemented in SMIC 65-nm CMOS process. To achieve high operating frequency-1 GHz, a frequency multiplication circuit is proposed. A capacitive compensation in transmitter side is used to improve the power delivery performance in Series-Paralled topology based on the principle of magnetic resonance coupling. 12 mW power delivery is achieved by using 0.2 × 0.2 mm2 inductor with a 30 μm separation between stacked chips. The size of inductor is 91% reduction compared with previous reported chip-to-chip wireless power transmission systems.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285154
