Title :
Capacitance-voltage(C-V) characteristics of InGaAs/InAs/InGaAs quantum well MOSFET
Author :
Kanak Datta;Sudipta Romen Biswas;Ehsanur Rahman;Abir Shadman;Quazi D. M. Khosru
Author_Institution :
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this work, the Capacitance-Voltage (C-V) characteristics of a InxGa1-xAs/InAs/InxGa1-xAs Quantum-Well (QW) MOSFET is investigated. 1D coupled Schrodinger-Poisson equations are solved self consistently by Finite Element Method (FEM) using COMSOL coupled with MATLAB to extract the charge density profile and Capacitance-Voltage profile. Effects of strain in the InxGa1-xAs/InAs/InxGa1-xAs Quantum-Well channel are also investigated. At the same time, effects of various device and process parameters like dielectric material, channel thickness and doping density on the C-V characteristics are also explored. The extracted C-V profile is also compared with the results obtained using SILVACO ATLAS.
Keywords :
"Capacitance-voltage characteristics","Logic gates","Capacitance","Charge carrier density","Doping","Dielectrics","III-V semiconductor materials"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285215
