Modified Ebers-Moll model of magnetic bipolar transistor

Magnetic Bipolar Transistor is a promising novel device that provides electrical as well as magnetic control in order to exert desired output. In this paper relative performance of Magnetic Bipolar Transistor and its equivalent representation by Ebers-Moll model has been theoretically studied in terms of their common emitter current gain. We simulated the device to extract its behavior under varying applied field. A range of magnetic field is suggested within which the model follows the actual device characteristics. An analytical relation between common emitter current gain of Magnetic Bipolar Transistor and applied magnetic field is established. Finally a modification in the existing EbersMoll model is proposed to ensure better compatibility with actual characteristics.