Title :
Purely sidewall InGaN/GaN core-shell nanorod green light-emitting diodes
Author :
Da-Wei Lin;Yung-Chi Wu;Hao-Chung Kuo;Gou-Chung Chi;Yu-Pin Lan;Lung-Hsing Hsu;Yang-Fang Chen
Author_Institution :
Department of Photonics &
Abstract :
A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength and low efficiency droop.
Keywords :
"Nanoscale devices","Epitaxial growth","Three-dimensional displays","Gallium nitride","MOCVD","Semiconductor device measurement"
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2015 International Conference on
Print_ISBN :
978-1-4673-6834-6
Electronic_ISBN :
2160-5041
DOI :
10.1109/OMN.2015.7288872
