• DocumentCode
    3667916
  • Title

    Coupled 2D/3D transport: Analysis of graphene-SiC devices

  • Author

    M.G. Ancona;K.D. Hobart;T.J. Anderson

  • Author_Institution
    Electronics S&
  • fYear
    2015
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    Macroscopic equations are discussed that describe carrier transport in situations in which an ordinary 3D semiconductor is coupled to a 2D material like graphene or molybdenum disulfide. The transport equations are familiar ones from either diffusion-drift or density-gradient theory, with the main focus being on the critical boundary conditions that couple the two systems together. To illustrate the hybrid description we apply it to situations involving graphene on p-type SiC.
  • Keywords
    "Graphene","Silicon carbide","Three-dimensional displays","Electric potential","Mathematical model","Schottky diodes","Boundary conditions"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292284
  • Filename
    7292284