DocumentCode
3667916
Title
Coupled 2D/3D transport: Analysis of graphene-SiC devices
Author
M.G. Ancona;K.D. Hobart;T.J. Anderson
Author_Institution
Electronics S&
fYear
2015
Firstpage
161
Lastpage
164
Abstract
Macroscopic equations are discussed that describe carrier transport in situations in which an ordinary 3D semiconductor is coupled to a 2D material like graphene or molybdenum disulfide. The transport equations are familiar ones from either diffusion-drift or density-gradient theory, with the main focus being on the critical boundary conditions that couple the two systems together. To illustrate the hybrid description we apply it to situations involving graphene on p-type SiC.
Keywords
"Graphene","Silicon carbide","Three-dimensional displays","Electric potential","Mathematical model","Schottky diodes","Boundary conditions"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292284
Filename
7292284
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