Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study

Because of the scaling of electronic devices, quantum effects play an important role on their characteristics which are becoming more and more dominant as transistors approach to nanometer scales. Therefore, the inclusion of these effects in advanced device simulators will be mandatory to predict the behavior of future transistors targeting sub-10nm nodes. This work implements Source-to-Drain Tunneling mechanisms (S/D tunneling) in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators showing the importance of quantum transport effects and the possibility of being implemented in a reliable way on advanced device simulators.