Coupling the Phase-Field Method with an electrothermal solver to simulate phase change mechanisms in PCRAM cells

In order to simulate the electro-thermal characteristics of our devices and to reproduce the phase change mechanisms of the PCM material during the set and reset operations, we have developped a finite element electro-thermal solver coupled with the Phase Field Method. Retention simulations for full GST layers are first presented. Then set simulations, with a low and with a high current, starting from a partially amorphized domain are presented. The different cristallized domains for low and high set current highlighted by TEM images reveal the impact of the set current on the crystallization mechanisms. The Phase-Field simulations confirm this result.