Title :
Compact modeling of GaN HEMT based on device-internal potential distribution
Author :
Y. Okada;Y. Tanimoto;T. Mizoguchi;H. Zenitani;H. Kikuchihara;H. J. Mattausch;M. Miura-Mattausch
Author_Institution :
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan
Abstract :
A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device including the trap density. It is verified that the model can reproduce all 2D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured accurately by adjusting the trap time constant.
Keywords :
"Gallium nitride","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Mathematical model","Logic gates","Poisson equations"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292320
