• DocumentCode
    3667951
  • Title

    Compact modeling of GaN HEMT based on device-internal potential distribution

  • Author

    Y. Okada;Y. Tanimoto;T. Mizoguchi;H. Zenitani;H. Kikuchihara;H. J. Mattausch;M. Miura-Mattausch

  • Author_Institution
    Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan
  • fYear
    2015
  • Firstpage
    305
  • Lastpage
    308
  • Abstract
    A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device including the trap density. It is verified that the model can reproduce all 2D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured accurately by adjusting the trap time constant.
  • Keywords
    "Gallium nitride","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Mathematical model","Logic gates","Poisson equations"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292320
  • Filename
    7292320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667951