Diffusion-drift modeling of carbon-based nanowire FETs

Continuum models of transport in carbon nanotubes and graphene nanoribbons are created by treating the charge flow in the carbon layers in a 2D diffusion-drift approximation. A crucial element of the treatment is the electron equation of state that allows the effects of confinement and chirality to be represented. To model nanowire devices, the transport layer is embedded within a 3D structure and coupled to the electrostatics. This is illustrated with applications to carbon-based nanowire field-effect transistors of varying designs.