Title :
Designing of p-AlxGa1−xN/AlyGa1−yN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs
Author :
Xinhui Chen;Yuh-Renn Wu
Author_Institution :
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
Abstract :
A series of the p-AlxGa1-xN/AlyGa1-yN super lattice structure has been examined as the p-contact and transparent layer for different ultra-violet light emitting diode (UVLED) with a self-consistent 1D Poisson and Schrödinger solver. The optimized condition for different UV wavelength has been found for UVLED for 223 nm to 355 nm. By calculating the absorption coefficient of the SL structure, we confirmed that the proper SL structure has the enormous potential of being used in AlGaN UVLEDs.
Keywords :
"Aluminum gallium nitride","Wide band gap semiconductors","Absorption","Photonic band gap","Photonics","Light emitting diodes"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292805
