DocumentCode
3668486
Title
Boundary conditions in characterizing Inx Ga1−x As /GaAs quantum well infrared photodetector
Author
X. Tong;N. Lan;X. Q. Lu;D. Y. Xiong
Author_Institution
Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai 200241, China
fYear
2015
Firstpage
181
Lastpage
182
Abstract
We study the optical transition between bound-to-continuum states in InGaAs/GaAs quantum well infrared photodetector (QWIP) by analyzing two possible boundary conditions for the continuum states. InGaAs/GaAs QWIP differs from the GaAs/AlGaAs QWIP in many aspects. Comparing running wave function and Bloch wave function with experimental results, we find that Bloch wave function is the much more suitable boundary condition for multiple InGaAs/GaAs quantum well (QW) structure. The blueshift of the responding peak is smaller when the Bloch wave boundary conditions apply.
Keywords
"Gallium arsenide","Indium gallium arsenide","Boundary conditions","Photodetectors","Wave functions","Photoconductivity","Quantum dots"
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
ISSN
2158-3234
Print_ISBN
978-1-4799-8378-0
Type
conf
DOI
10.1109/NUSOD.2015.7292882
Filename
7292882
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