Title :
The switching characteristic of BJT1 using in Marx type pulsed power generator by pspice model
Author :
Z. Li;Y. Zhang;J. Rao;X. Zhao;T. Sakugawa;H. Akiyama
Author_Institution :
University of Shanghai for Science and Technology, No. 516 Jungong Street, Shanghai, 200093 China
fDate :
5/1/2015 12:00:00 AM
Abstract :
With the development of semiconductor technology, semiconductor switching devices have the advantages of fast switching speed, high stability, so they are popular in pulsed power research field, but the use of semiconductor switch causes the main circuit be complex and the cost increase, and the switching speed is limited by the drift velocity of the charge carriers for the particular device. So it is important to choose a high efficient and fast action switch in pulsed power generator. The power switches determines the rise-time of output pulses. This study designed a controllable semiconductor switch using in Marx type pulsed power generator based on bipolar junction transistor. Some kinds of BJTs were chosen to be evaluated a 5-stage Marx generator using this model. From the results, the switch characters of BJT were similar to the experiment results. It can be said that the BJT simulation model introduced in this paper can be used to assist the design of Marx Generator.
Keywords :
"Electric breakdown","Switches","Integrated circuit modeling","Generators","SPICE","Semiconductor device modeling","Switching circuits"
Conference_Titel :
Pulsed Power Conference (PPC), 2015 IEEE
Electronic_ISBN :
2158-4923
DOI :
10.1109/PPC.2015.7296855