Title :
Solid-state Marx generator with 24 KV 4H-SIC IGBTs
Author :
M. Hinojosa;H. O´Brien;E. Van Brunt;A. Ogunniyi;C. Scozzie
Author_Institution :
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, USA
fDate :
5/1/2015 12:00:00 AM
Abstract :
This paper presents results on the utilization of newly-developed 24-kV n-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs) for Marx generator circuits. These state-of-the-art devices were evaluated in a small-scale, four-stage voltage multiplication circuit for their possible use in multi-scale power modulators. The 24 kV IGBTs had a chip area of 0.81 cm2 and were rated for 20 A. Their active area was 0.28 cm2, with a drift region of 230 μm, and a field-stop buffer of 2 μm. To evaluate device performance, the Marx generator was operated in single pulse mode. The input voltage was varied from 1 kV to 8 kV to obtain output voltages of 4 kV and 32 kV, respectively. The Marx generator delivered 0.6 MW to a low-inductance resistive load of 1500 Ω. The silicon carbide IGBTs displayed promising results for possible use in pulsed-power applications.
Keywords :
"Insulated gate bipolar transistors","Silicon carbide","Generators","Capacitors","Voltage measurement","Logic gates","Current measurement"
Conference_Titel :
Pulsed Power Conference (PPC), 2015 IEEE
Electronic_ISBN :
2158-4923
DOI :
10.1109/PPC.2015.7297038