Apparent Schottky Barrier Height of MIS Ni/SiC diodes

Schottky Barrier Height (SBH) of Metal-Insulator-Semiconductor Ni/SiC diodes were theoretically and experimentally analysed through simulation/measurements of Current-Voltage curves. The SBH increase with the temperature was studied by Thermionic Emission Model, considering an insulator layer between metal and semiconductor. A new method of simulation is described, showing that extracting the SBH without taking into account the existence of the insulating layer, provides misleading results for Schottky diodes with Metal Insulator Semiconductor structure. The difference between real SBH and apparent SBH is discussed. An explanation for the SBH apparent increasing when the measuring temperature is increased is suggested. As an example the model is applied on fabricated Ni/SiC Schottky structures.