Performance comparison between TFET and FinFET differential pair

The goal of this work is to analyze the suitability of TFET and FinFET transistors in a differential pair. A quantitative comparison has been made based on the differential gain, the common-mode gain and the common-mode rejection ratio for each case. The first part of this work focused on perfectly matched circuits and explained the difference observed in the absolute values and in the susceptibility to the input voltage variation. The obtained curves have been explained based on the prevailing transport mechanisms for each case and its consequence on parameters such as transistor transconductance and output resistance. The second part highlighted the impact of mismatched transistors on the extracted results. The variation and the final result for each parameter have been analyzed. It was observed that TFETs presented better absolute values for the three highlighted parameters and better behavior for higher channel lengths. However, these devices have been more susceptible to the input voltage variation and to the decrease of channel length.