Design and comparative performance simulation of RHBD inverter cells in 180nm CMOS

In this work, the Radiation Hardened by Design (RHBD) of an inverter cell is proposed. The design considers the use of standard CMOS processes with commercial PDK, focusing on fully incorporating the design into CAD tools allowing the automatic place & route. Corners and Monte Carlo simulations were performed in order to analyze and compare the performances between the standard cells and proposed devices in terms of power, delay, and area consumption. The simulated results indicate that by trading of area and circuit density it is possible to synthesize an automated RHBD with an equivalent performance. Moreover, employing enclosed gate technique in both NMOS and PMOS networks improved propagation delay, energy consumption and lead to reduced variability if compared to standard cells.