Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

We explore here the suitability of a mode space tight binding algorithm to various III-V homo- and heterojunction nanowire devices. We show that in III-V materials, the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature. Nevertheless, we demonstrate here the possibility to clean III-V mode space basis from the unphysical modes and achieve a significant speed up ratio (>150×), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for NEGF transport studies. Such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.