Hybrid states and bandgap in zigzag graphene/BN heterostructures

In this work, we analyze the properties of edge states in in-plane heterostructures consisting of adjacent zigzag graphene and Boron Nitride (BN) nanoribbons. In contrast with pure zigzag graphene nanoribbons, where gapless edge states are nearly flat and cannot contribute to the conduction, at graphene/BN interfaces the properties of corresponding states strongly change. Though they are still strongly localized at the zigzag interfaces of graphene, they exhibit a high group velocity. Additionally, in the case of an asymmetric BN/graphene/BN structure, a bandgap of about 207 meV can be opened for a graphene sub-ribbon width of 5 nm.