Simulation of transport through a cavity defined in graphene with electrostatic lithography

We present numerical simulations that we have performed with the aim of interpreting the results of the transport measurements that we have recently obtained on a graphene device in which a cavity-shaped potential, orthogonal to the transport direction, had been induced with electrostatic lithography. The resistance of the sample has been computed for a broad spectrum of possible potential configurations, both as a function of the backgate voltage, and of the position of a biased probe scanned at a fixed distance from the graphene sheet. The comparison between the experimental measurements and the numerical results have allowed us to determine the details of the potential profile in the device.