DocumentCode
3678682
Title
A highly efficient 2kW 3-level full-MOSFET inverter
Author
Lefevre Guillaume;Degrenne Nicolas;Mollov Stefan
Author_Institution
Mitsubishi Electric R&
fYear
2015
Firstpage
1
Lastpage
10
Abstract
This paper investigates an improved 3-level flying capacitor inverter topology allowing a drastic reduction of reverse recovery related losses. It benefits from the latest superjunction (SJ) MOSFET devices. The presented 2kW inverter was designed for Japanese PV market (200Vrms). It allows non unitary power factor operations with peak and European efficiency of 98.0% and 97.6% respectively. Thanks to SJ MOSFET implementation, it outperforms state-of-art configuration using IGBTs and SiC diodes in terms of efficiency.
Keywords
"Capacitors","Snubbers","Switches","MOSFET","Topology","Semiconductor diodes","Insulated gate bipolar transistors"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309058
Filename
7309058
Link To Document