• DocumentCode
    3678833
  • Title

    A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st/7th generation 1200V/650V chipset for UPS and PV inverter application

  • Author

    Marco Honsberg;Akiko Goto;Eric R. Motto

  • Author_Institution
    Mitsubishi Electric Europe B.V. 40880 Ratingen, Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.
  • Keywords
    "Insulated gate bipolar transistors","Inductance","Topology","Switches","Uninterruptible power systems","Silicon","Commutation"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309215
  • Filename
    7309215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3678833