• DocumentCode
    3678886
  • Title

    Current-fed GaN front-end converter for ISOP-IPOS converter-based high power density dc distribution system

  • Author

    Yusuke Hayashi;Hiroshi Iso;Daisuke Hara;Akira Matsumoto

  • Author_Institution
    Osaka University, 2-1 Yamada-Oka, Suita, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    A current-fed ac-dc converter using Gallium Nitride (GaN) power devices has been proposed to realize high power density ISOP (Input Series and Output Parallel)-IPOS (Input Parallel and Output Series) converter-based dc distribution system. The current-fed converter becomes the strong candidate in the ISOP-IPOS converter-based dc distribution system because this system expands the possibility of the ac-dc converter design without taking the converter I/O voltages and its output power into account. An 1 kW prototype with the efficiency of 95.5% has been developed by using GaN-HEMTs to show the feasibility. Design consideration for the GaN converter has been also conducted quantitatively taking the low on-resistance, the high-speed switching behavior and its own device structure into account. The ISOP-IPOS converter-based dc distribution system takes full advantage of the current-fed converter and the converter using GaN devices contributes to realizing higher power density dc distribution system.
  • Keywords
    "Density measurement","Power system measurements","Gallium nitride","Switches","Topology","Next generation networking","Prototypes"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309269
  • Filename
    7309269