Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions

The 15 kV SiC MOSFET and 15 kV SiC IGBT are two state-of-the-art high voltage SiC devices. These high voltage SiC devices enable simple two level converters for medium voltage source converter compared to the complex three level and multilevel topologies with Silicon devices. This paper presents the detailed experimental results for the characterization of 15 kV SiC MOSFET module at 10 kV and 12 kV DC bus for two different configuration of device under test. This paper also presents the switching loss comparison of 15 kV SiC MOSFET with 15 kV SiC IGBT for the same dv/dt. Based on loss data obtained from experiments, this paper finally reports the switching frequency limits of 15 kV SiC MOSFET for 10 kV DC bus, 3-Phase two level converter and Bi-directional DC-DC phase leg converter with 10 kV output voltage and comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for the same dv/dt in a unidirectional DC-DC boost hard switching converter for 10 kV output voltage.