DocumentCode :
3679994
Title :
Evaluating different implementations of online junction temperature sensing for switching power semiconductors
Author :
He Niu;Robert D. Lorenz
Author_Institution :
University of Wisconsin-Madison, WEMPEC Madison, WI, 53706
fYear :
2015
Firstpage :
5696
Lastpage :
5703
Abstract :
Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This paper includes Tj sensing methods based on device power dissipation, Tj sensing methods based on the “diode-on-die technology”, Tj sensing methods based on device on-state analysis, and Tj sensing methods based on device switching transients. Advantages and limits of these methods are also provided.
Keywords :
"Insulated gate bipolar transistors","Switches","Semiconductor device measurement","Temperature sensors","Current measurement","MOSFET"
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN :
2329-3721
Electronic_ISBN :
2329-3748
Type :
conf
DOI :
10.1109/ECCE.2015.7310460
Filename :
7310460
Link To Document :
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