Title :
Evaluating different implementations of online junction temperature sensing for switching power semiconductors
Author :
He Niu;Robert D. Lorenz
Author_Institution :
University of Wisconsin-Madison, WEMPEC Madison, WI, 53706
Abstract :
Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This paper includes Tj sensing methods based on device power dissipation, Tj sensing methods based on the “diode-on-die technology”, Tj sensing methods based on device on-state analysis, and Tj sensing methods based on device switching transients. Advantages and limits of these methods are also provided.
Keywords :
"Insulated gate bipolar transistors","Switches","Semiconductor device measurement","Temperature sensors","Current measurement","MOSFET"
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
Electronic_ISBN :
2329-3748
DOI :
10.1109/ECCE.2015.7310460