Title :
Recent advancements in IGCT technologies for high power electronics applications
Author :
Umamaheswara Vemulapati;Munaf Rahimo;Martin Arnold;Tobias Wikström;Jan Vobecky;Björn Backlund;Thomas Stiasny
Author_Institution :
ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, Baden-Dä
Abstract :
In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept.
Keywords :
"Logic gates","Cathodes","Insulated gate bipolar transistors","Performance evaluation","Market research","Anodes","Switches"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7311740
