• DocumentCode
    3682871
  • Title

    A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise

  • Author

    Thanh Ngoc Thi Do;Szhau Lai;Mikael Horberg;Herbert Zirath;Dan Kuylenstierna

  • Author_Institution
    Dept. of Microtechnol. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a MMIC GaN HEMT Voltage- Controlled-Oscillator (VCO). The VCO is tunable between 6.45-7.55 GHz with good tuning linearity, average output power about 1 dBm, and a good phase noise with little variation over the tuning range. For a bias of Vd /Id = 6 V/33 mA, the measured phase noise is -98 dBc/Hz @ 100 kHz and -132 dBc/Hz @ 1 MHz offset frequencies, respectively. To the author´s best knowledge, this is the lowest phase noise reported for a VCO in GaN HEMT technology with comparable oscillation frequency and tuning range. The 1 MHz offset phase noise is also comparable to state-of-the-art GaAs-InGaP HBT VCOs with similar tuning range.
  • Keywords
    "Phase noise","Gallium nitride","HEMTs","Tuning","Voltage-controlled oscillators","Frequency measurement"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314478
  • Filename
    7314478